IRFR3707PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR/U3707PbF
1000
100
10
3.5V
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
1000
100
10
3.5V
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 25 °C
T_J = 175°C
10
3.0
V DS= 15V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ID = 61A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3