IRFR3707PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR/U3707PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
30
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
R_DS(on)
–––
Static Drain-to-Source On-Resistance _{–––}
V_GS(th)
Gate Threshold Voltage
1.0
–––
I_DSS
Drain-to-Source Leakage Current
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.027 –––
9.7 13
13.2 17.5
––– 3.0
––– 20
––– 100
––– 200
––– -200
V
V/°C
mΩ
V
µA
nA
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 15A ƒ
V_GS = 4.5V, I_D = 12A ƒ
V_DS = V_GS, I_D = 250µA
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
V_GS = 16V
V_GS = -16V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Q_g
Q_gs
Q_gd
Q_oss
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
37 ––– –––
––– 19 –––
––– 8.2 –––
––– 6.3 –––
––– 18 27
––– 8.5 –––
––– 78 –––
––– 11.8 –––
––– 3.3 –––
––– 1990 –––
––– 707 –––
––– 50 –––
S V_DS = 15V, I_D = 49.6A
I_D = 24.8A
nC V_DS = 15V
V_GS = 4.5V ƒ
V_GS = 0V, V_DS = 15V
V_DD = 15V
ns ^{ID = 24.8A}
R_G = 1.8Ω
V_GS = 4.5V ƒ
V_GS = 0V
V_DS = 15V
pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E_AS
I_AR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
213
61
Units
mJ
A
Diode Characteristics
Symbol
I_S
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.88
0.8
39
49
42
62
Max.
61„
244
1.3
–––
59
74
63
93
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
T_J = 25°C, I_S = 31A, V_GS = 0V ƒ
T_J = 125°C, I_S = 31A, V_GS = 0V ƒ
T_J = 25°C, I_F = 31A, V_R=20V
di/dt = 100A/µs ƒ
T_J = 125°C, I_F = 31A, V_R=20V
di/dt = 100A/µs ƒ
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