IRFP4468PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

1000
TJ = 175°C
100
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
LIMITED BY PACKAGE
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
2014-8-14
10000
1000
IRFP4468PBF
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
100
10
LIMITED BY PACKAGE
1msec
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
120
ID = 5mA
110
100
90
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
3000
2500
2000
ID
TOP
30A
41A
BOTTOM 180A
1500
1000
500
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
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