IRFP4468PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
1
0.01
4.0V _{≤ 60μs PULSE WIDTH}
Tj = 25°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
TJ = 25°C
10
1
2.0
VDS = 25V
≤ 60μs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
35000
30000
25000
20000
VGS = 0V, f = 100 kHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
15000
10000
Coss
5000
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
2014-8-14
3
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
IRFP4468PBF
4.0V
10
0.1
≤ 60μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
ID = 180A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 180A
VDS= 80V
12
VDS= 50V
VDS= 20V
8
4
0
0 50 100 150 200 250 300 350 400 450
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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