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| IRFP4468PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFP4468PBF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ÎV(BR)DSS/ÎTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
100 âââ âââ V VGS = 0V, ID = 250μA
âââ 0.09 âââ V/°C Reference to 25°C, ID = 5mAd
âââ 2.0 2.6 mΩ VGS = 10V, ID = 180A g
2.0 âââ 4.0 V VDS = VGS, ID = 250μA
âââ âââ 20 μA VDS = 100V, VGS = 0V
âââ âââ 250
VDS = 80V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ 0.8 âââ Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
310 âââ âââ
Qg
Total Gate Charge
âââ 360 540
Qgs
Gate-to-Source Charge
âââ 81 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 89
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ 270 âââ
td(on)
Turn-On Delay Time
âââ 52 âââ
tr
Rise Time
âââ 230 âââ
td(off)
Turn-Off Delay Time
âââ 160 âââ
tf
Fall Time
âââ 260 âââ
Ciss
Input Capacitance
âââ 19860 âââ
Coss
Output Capacitance
âââ 1360 âââ
Crss
Reverse Transfer Capacitance
âââ 540 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 1550 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)h âââ 900 âââ
S VDS = 50V, ID = 180A
nC ID = 180A
VDS =50V
VGS = 10V g
ID = 180A, VDS =0V, VGS = 10V
ns VDD = 65V
ID = 180A
RG = 2.7Ω
VGS = 10V g
pF VGS = 0V
VDS = 50V
Æ = 100 kHz, See Fig. 5
VGS = 0V, VDS = 0V to 80V i, See Fig. 11
VGS = 0V, VDS = 0V to 80V h
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) d
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 290c A MOSFET symbol
D
showing the
âââ âââ 1120 A integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 180A, VGS = 0V g
âââ 100
ns TJ = 25°C
VR = 85V,
âââ 110
TJ = 125°C
IF = 180A
âââ 370
nC TJ = 25°C
di/dt = 100A/μs g
âââ 420
TJ = 125°C
âââ 6.9 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-14
2
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