IRFR3710ZTRL Datasheet, PDF (3/12 Pages) Kersemi Electronic Co., Ltd. – HEXFET Power MOSFET

IRFR/U3710ZPbF & IRFU3710Z-701PbF
1000
TOP
100
BOTTOM
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
10
1
0.1
4.0V
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
10
4.0V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 175°C
100
10
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
1.0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.kersemi.com
100
80
TJ = 25°C
60
TJ = 175°C
40
20
0
0
VDS = 10V
10 20 30 40 50 60 70 80
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3