IRFR3710ZTRL Datasheet, PDF (2/12 Pages) Kersemi Electronic Co., Ltd. – HEXFET Power MOSFET

IRFR/U3710ZPbF & IRFU3710Z-701PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V_GS = 0V, I_D = 250µA
e ^{∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.088 ––– V/°C Reference to 25°C, ID = 1mA}
R_DS(on)
Static Drain-to-Source On-Resistance ––– 15 18 ^mΩ V_GS = 10V, I_D = 33A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
39 ––– ––– S V_DS = 25V, I_D = 33A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 100V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Q_g
Total Gate Charge
––– 69 100
I_D = 33A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
15
25
–––
–––
e nC VDS = 80V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 14 –––
V_DD = 50V
t_r
Rise Time
––– 43 –––
I_D = 33A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
53
42
–––
–––
e ns RG = 6.8 Ω
V_GS = 10V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 7.5 –––
––– 2930 –––
––– 290 –––
––– 180 –––
––– 1200 –––
––– 180 –––
––– 430 –––
nH 6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
f ^{VGS = 0V, VDS = 80V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 56
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– 220
integral reverse
G
––– ––– 1.3
e ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 33A, V_GS = 0V
––– 35
––– 41
53
62
e ^{ns TJ = 25°C, IF = 33A, VDD = 50V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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