IRFR3710ZTRL Datasheet, PDF (1/12 Pages) Kersemi Electronic Co., Ltd. – HEXFET Power MOSFET

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Multiple Package Options
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
HEXFET^® Power MOSFET
D
V_DSS = 100V
G
R_DS(on) = 18mΩ
S
I_D = 42A
D-Pak
I-Pak
IRFR3710ZPbF _IRFU3710ZPbF
I-Pak Leadform 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
d ^VGS
Gate-to-Source Voltage
E_{AS (Thermally limited)} Single Pulse Avalanche Energy
E_AS (Tested )
I_AR
E_AR
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.kersemi.com
1