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BC856W Datasheet, PDF (3/3 Pages) NXP Semiconductors – PNP general purpose transistors
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BC856W/7W/8W
I C - V CE
-50
I B =-400µA
-40
I B =-350µA
I B =-300µA
I B =-250µA
-30
I B =-200µA
I B =-150µA
-20
I B =-100µA
-10
I B =-50µA
0
0
-4
-8
-12
-16
-20
COLLECTOR-EMITTER VOLTAGE V CE (V)
-100
-50
VCE =-5V
-30
I C - V BE
-10
-5
-3
-1
-0.5
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
BASE-EMITTER VOLTAGE V BE (V)
1k
VCE =-5V
500
300
h FE - I C
100
50
30
10
-0.1
-0.3 -1
-3 -10 -30 -100
COLLECTOR CURRENT I C (mA)
VBE(sat) , V CE(sat) - I C
-10
I C /I B =20
-3
-1
VBE(sat)
-0.3
-0.1
-0.03
VCE(sat)
-0.01
-0.1 -0.3 -1
-3 -10 -30 -100
COLLECTOR CURRENT I C (mA)
20
f=1MHz
I E =0
10
5
3
C ob - V CB
1
-1
-3
-10
-30 -100 -200
COLLECTOR-BASE VOLTAGE V CB (V)
2008. 8. 29
Revision No : 4
3/3