BC856W Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistors

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
hFor Complementary With NPN Type BC846W/847W/848W.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
BC856W
Collector-Base Voltage
BC857W
BC858W
V_CBO
Collector-Emitter
Voltage
BC856W
BC857W
BC858W
V_CEO
BC856W
Emitter-Base Voltage
BC857W
BC858W
V_EBO
Collector Current
I_C
Emitter Current
I_E
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-80
-50
-30
-65
-45
-30
-5
-5
-5
-100
100
100
150
-55q150
UNIT
V
V
V
mA
mA
mW


BC856W/7W/8W
EPITAXIAL PLANAR PNP TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
Type Name
Lot No.
MARK SPEC
TYPE BC856W-A
MARK
3A
BC856W-B
3B
BC857W-A
3E
BC857W-B
3F
BC857W-C
3G
BC858W-A
3J
BC858W-B
3K
BC858W-C
3L
2008. 8. 29
Revision No : 4
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