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| BC856W Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC856W/7W/8W
ELECTRICAL CHARACTERISTICS (Ta=25Â)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
DC Current Gain (Note)
BC856W
BC857W
BC858W
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
hFE
VCE(sat) 1
VCE(sat) 2
VBE(sat) 1
VBE(sat) 2
VBE(ON1)
VBE(ON2)
fT
Cob
Noise Figure
NF
TEST CONDITION
VCB=-30V, IE=0
VCE=-5V, IC=-2mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
VCE=-6V, IC=-0.2mA
Rg=2kÊ, f=1kHz
MIN.
-
125
125
125
-
-
-
-
-0.6
-
-
-
TYP.
-
-
-
-
-0.09
-0.25
-0.7
-0.9
-0.65
-
150
4.5
MAX.
-15
475
800
800
-0.3
-0.65
-
-
-0.75
-0.82
-
-
UNIT
nA
V
V
V
V
MHz
pF
-
2.0
10
dB
NOTE : According to the value of hFE the BC856, BC857, BC858 are classified as follows.
CLASSIFICATION
A
B
BC856W
125q250
220q475
hFE
BC857W
BC858W
125q250
125q250
220q475
220q475
C
-
420q800
420q800
2008. 8. 29
Revision No : 4
2/3
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