JCS8N60 Datasheet, PDF (6/12 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS8N60
Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
Notes：
1. V_GS=0V
2. I_D=250μA
0.8
-75 -50 -25
0
25
50
75 100 125 150
T _j [℃ ]
Maximum Safe Operating Area
For JCS8N60S/B/C
On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
Notes：
0.5
1. V_GS=10V
2. I_D=3.5A
0.0
-75 -50 -25
0
25
50
75 100 125 150
T _j [ ℃]
Maximum Safe Operating Area
For JCS8N60F
Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
25
50
75
100
125
150
T _j [ ℃]
版本：201007A
6/12