JCS8N60 Datasheet, PDF (5/12 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS8N60
On-Region Characteristics
V_GS
Top 15V
10V
8V
10
7V
6.5V
6V
5.5V
Bottom 5V
Transfer Characteristics
10
150℃
1
25℃
Notes：
1
1. 250μs pulse test
2. T_C=25℃
Notes：
1.250μs pulse test
2.V_DS=40V
0.1
1
10
2
4
6
8
10
V_DS [V]
V_GS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.40
1.35
1.30
1.25
V_GS=10V
1.20
1.15
V_GS=20V
1.10
1.05
1.00
Note ：T_j=25℃
0.95
0
2
4
6
8
10
I_D [A]
Capacitance Characteristics
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. V_GS=0V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V_SD [V]
Gate Charge Characteristics
12
V =480V
DS
10
V =300V
DS
8
V =120V
DS
6
4
2
0
0
10
20
30
40
50
60
Q Toltal Gate Charge [nC]
g
版本：201007A
5/12