|
JCS8N60 Datasheet, PDF (2/12 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET | |||
|
◁ |
R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
JCS8N60
项ç®
Parameter
æé«æ¼æï¼æºæç´æµçµå
Drain-Source Voltage
符å·
Symbol
æ°å¼
Value
JCS8N60S/B/C JCS8N60F
VDSS
600
600
è¿ç»æ¼æçµæµ
Drain Current -continuous
ID
7.5
7.5*
T=25â
T=100â
4.4
4.4*
æ大èå²æ¼æçµæµï¼æ³¨ 1ï¼
Drain Current - pulse ï¼note 1ï¼
æé«æ
æºçµå
Gate-Source Voltage
IDM
VGSS
28
28*
±30
åèå²éªå´©è½éï¼æ³¨ 2ï¼
Single Pulsed Avalanche Energyï¼note 2ï¼ EAS
420
éªå´©çµæµï¼æ³¨ 1ï¼
Avalanche Currentï¼note 1ï¼
IAR
éå¤éªå´©è½éï¼æ³¨ 1ï¼
Repetitive Avalanche Currentï¼note 1ï¼ EAR
7.5
14.7
äºæ管ååæ¢å¤æ大çµåååéçï¼æ³¨ 3ï¼
Peak Diode Recovery dv/dtï¼note 3ï¼
dv/dt
5.5
èæ£åç
Power Dissipation
PD
147
48
TC=25â
-Derate
1.18
0.38
above
25â
æé«ç»æ¸©ååå¨æ¸©åº¦
Operating and Storage
Range
å¼çº¿æé«çæ¥æ¸©åº¦
Temperature
TJï¼TSTG
-55ï½+150
Maximum Lead Temperature for TL
300
Soldering Purposes
*æ¼æçµæµç±æé«ç»æ¸©éå¶
*Drain current limited by maximum junction temperature
åä½
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/â
â
â
çæ¬ï¼201007A
2/12
|
▷ |