JCS840 Datasheet, PDF (5/12 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS840
On-Region Characteristics
Transfer Characteristics
V_GS
Top
15V
10V
8V
7V
6.5V
6V
10
5.5V
Bottom 5V
10
150℃
Notes：
1. 250μs pulse test
2. T_C=25℃
1
1
10
V_DS[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
0.90
V_GS=10V
0.85
0.80
V_GS=20V
0.75
0.70
0.65
0
Note ：T_j=25℃
5
10
15
I _D [A]
Capacitance Characteristics
1
25℃
Notes：
1.250μs pulse test
2.V_DS=40V
0.1
2
4
6
8
V _GS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. V_GS=0V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V _SD [V]
Gate Charge Characteristics
12
V =400V
10
DS
V =250V
DS
8
V =100V
DS
6
4
2
0
0
10
20
30
40
50
60
Q Toltal Gate Charge [nC]
g
版本：201007A
5/12