JCS11N90WT Datasheet, PDF (5/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS11N90WT
On-Region Characteristics
V_GS
Top 15V
10V
9V
8V
7V
10
6.5V
6V
5.5V
Bottom 5V
Notes:
1
1. 250μs pulse test
2. T_C=25℃
1
10
V _DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.4
1.2
Transfer Characteristics
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.V_DS=40V
0.1
2
4
6
8
10
V _{G S} [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
V_GS=10V
1.0
V_GS=20V
0.8
Note:T_j=25℃
0
2
4
6
8 10 12 14 16 18 20
I _D [A]
Capacitance Characteristics
150℃
1
25℃
Notes:
1. 250μs pulse test
2. V_GS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V _{S D} [V]
Gate Charge Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10^-1
C_iss=C_gs+C_gd(C_ds=shorted)
C_iss
C_oss=C_ds+C_gd
C_rss=C_gd
C_oss
C_rss
10⁰
10¹
V _{D S} Drain-Source Voltage [V]
12
10
V_DS=720V
V_DS=450V
8
V_DS=180V
6
4
2
*Note：Id=11A
0
0
10
20
30
40
50
60
70
Q_g Toltal Gate Charge [nC]
版本：201202A
5/8