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JCS11N90WT Datasheet, PDF (4/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies | |||
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R
çµç¹æ§ ELECTRICAL CHARACTERISTICS
å¼å
³ç¹æ§ Switching Characteristics
延è¿æ¶é´ Turn-On delay time
ä¸åæ¶é´ Turn-On rise time
td(on)
tr
VDD=450V,ID=11A,RG=25â¦
ï¼note 4ï¼5ï¼
延è¿æ¶é´ Turn-Off delay time
td(off)
ä¸éæ¶é´ Turn-Off Fall time
tf
æ
æçµè·æ»é Total Gate Charge Qg
VDS =720V ,
æ
ï¼æºçµè· Gate-Source charge
Qgs
æ
ï¼æ¼çµè· Gate-Drain charge
Qgd
ID=11A
VGS =10V ï¼note 4ï¼5ï¼
JCS11N90WT
- 54 122 ns
- 130 280 ns
- 125 304 ns
- 80 181 ns
- 66 80 nC
- 13 - nC
- 35 - nC
æ¼ï¼æºäºæ管ç¹æ§åæ大é¢å®å¼ Drain-Source Diode Characteristics and Maximum Ratings
æ£åæ大è¿ç»çµæµ
Maximum Continuous Drain
-Source Diode Forward Current
IS
- - 11 A
æ£åæ大èå²çµæµ
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
- - 44 A
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Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=11A
- - 1.4 V
ååæ¢å¤æ¶é´
Reverse recovery time
trr
VGS=0V, IS=11A
ååæ¢å¤çµè·
Reverse recovery charge
dIF/dt=100A/μs (note 4)
Qrr
çç¹æ§ THERMAL CHARACTERISTIC
- 999 - ns
- 16.9 - μC
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Parameter
ç»å°ç®¡å£³ççé»
Thermal Resistance, Junction to Case
符å·
Symbol
Rth(j-c)
æ大
Max
JCS11N90WT
0.45
åä½
Unit
â/W
ç»å°ç¯å¢ççé»
Thermal Resistance, Junction to Ambient
Rth(j-A)
40
â/W
注éï¼
1ï¼èå²å®½åº¦ç±æé«ç»æ¸©éå¶
2ï¼L=15mH, IAS=11A, VDD=50V, RG=25 â¦,èµ·å§ç»
温 TJ=25â
3ï¼ISD â¤11A,di/dt â¤200A/μs,VDDâ¤BVDSS,èµ·å§ç»æ¸©
TJ=25â
4ï¼èå²æµè¯ï¼èå²å®½åº¦â¤300μs,å 空æ¯â¤2ï¼
5ï¼åºæ¬ä¸å·¥ä½æ¸©åº¦æ å
³
Notes:
1ï¼Pulse width limited by maximum junction
temperature
2ï¼L=15mH, IAS=11A, VDD=50V, RG=25 â¦,Starting
TJ=25â
3ï¼ISD â¤11A,di/dt â¤200A/μs,VDDâ¤BVDSS, Starting
TJ=25â
4ï¼Pulse Testï¼Pulse Width â¤300μs,Duty Cycleâ¤2ï¼
5ï¼Essentially independent of operating temperature
çæ¬ï¼201202A
4/8
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