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JCS11N90WT Datasheet, PDF (4/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies
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电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=450V,ID=11A,RG=25Ω
(note 4,5)
延迟时间 Turn-Off delay time
td(off)
下降时间 Turn-Off Fall time
tf
栅极电荷总量 Total Gate Charge Qg
VDS =720V ,
栅-源电荷 Gate-Source charge
Qgs
栅-漏电荷 Gate-Drain charge
Qgd
ID=11A
VGS =10V (note 4,5)
JCS11N90WT
- 54 122 ns
- 130 280 ns
- 125 304 ns
- 80 181 ns
- 66 80 nC
- 13 - nC
- 35 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
- - 11 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
- - 44 A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=11A
- - 1.4 V
反向恢复时间
Reverse recovery time
trr
VGS=0V, IS=11A
反向恢复电荷
Reverse recovery charge
dIF/dt=100A/μs (note 4)
Qrr
热特性 THERMAL CHARACTERISTIC
- 999 - ns
- 16.9 - μC
项目
Parameter
结到管壳的热阻
Thermal Resistance, Junction to Case
符号
Symbol
Rth(j-c)
最大
Max
JCS11N90WT
0.45
单位
Unit
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
40
℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=15mH, IAS=11A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤11A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction
temperature
2:L=15mH, IAS=11A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤11A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201202A
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