JCS11N90WT Datasheet, PDF (3/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies

R
电特性 ELECTRICAL CHARACTERISTICS
JCS11N90WT
项目
符号
测试条件
最小 典型 最大 单位
Parameter
Symbol
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏－源击穿电压
Drain-Source Voltage
BV_DSS
I_D=250μA, V_GS=0V
900 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBV_DSS/Δ I_D=250μA, referenced to
T_J
25℃
- 0.98 - V/℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
I_DSS
正向栅极体漏电流
V_DS=900V,V_GS=0V,
T_C=25℃
V_DS=720V, T_C=125℃
- - 1 μA
- - 10 μA
Gate-body leakage current,
forward
I_GSSF
V_DS=0V, V_GS =30V
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
I_GSSR
V_DS=0V, V_GS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS , I_D=250μA
3.0 - 5.0 V
静态导通电阻
Static Drain-Source
On-Resistance
R_DS(ON) V_GS =10V , I_D=5.5A
- 0.90 1.10 Ω
正向跨导
Forward Transconductance
g_fs
V_DS = 40V, I_D=5.5A（note 4） - 9.5 - S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
输出电容
Output capacitance
C_iss
C_oss
V_DS=25V,
V_GS =0V,
f=1.0MH_Z
- 2550 3340 pF
- 210 270 pF
反向传输电容
Reverse transfer capacitance
C_rss
- 22 30 pF
版本：201202A
3/8