TIP35C Datasheet, PDF (3/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

R
TIP35C
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Base-Emitter Voltage
DC Current Gain
Common emitter
Vce=-5V
Tc=25℃
Tc=150℃
Tc=150℃
Tc=25℃
Common emitter
VCE = 5 V Single pulse test
BASE-EMITTER VOLTAGE VBE（V）
Saturation Voltage
Common emitter
IC/IB = 10
Single pulse test
Tc=150℃
Tc=25℃
COLLECTOR CURRENT IC（A）
Power Derating
Infinite heat sink
COLLECTOR CURRENT IC（A）
SOA
CASE TEMPERATURE TC（℃）
TC=25℃ DC Operation
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
COLLECTOR-EMITTER VOLTAGE VCE（V）
300us
1ms
10ms
DC
版本：201605B
3/4