BFG135_2015 Datasheet, PDF (9/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 7GHz wideband transistor

Philips Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
10
handbook, halfpage
Zi
(Ω)
8
6
4
2
0
0
0.5
MEA949
ri
xi
1
1.5
POUT (W)
V_CE = 10 V; f = 900 MHz.
Fig.16 Input impedance as a function of output
power.
handbook, ¹h⁰alfpage
Zi
(Ω)
8
6
4
2
0
0
0.5
MEA950
ri
xi
1
1.5
POUT (W)
V_CE = 12.5 V; f = 900 MHz.
Fig.17 Input impedance as a function of output
power.
handbook,⁸h⁰alfpage
η
(%)
70
60
MEA947
7.5 V ^{10 V}
VCE =
12.5 V
50
40
0
0.5
1 _{POUT (W)} 1.5
handbook¹, ^.h⁵alfpage
P _OUT
(W)
1
0.5
MEA945
VCE =
12.5 V
10 V
7.5 V
0
0
100
200
300
PIN (mW)
f = 900 MHz.
Fig.18 Efficiency as a function of output power.
1995 Sep 13
f = 900 MHz.
Fig.19 Output power as a function of input power.
9