BFG135_2015 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 7GHz wideband transistor

Philips Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB292
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 900 mV; T_amb = 25 °C;
f_(p+q−r) = 443.25 MHz.
Fig.8 Intermodulation distortion as a function of
collector current.
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB293
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 850 mV; T_amb = 25 °C;
f_(p+q−r) = 793.25 MHz.
Fig.9 Intermodulation distortion as a function of
collector current.
45
handbook, halfpage
d2
(dB)
50
MBB291
45
handbook, halfpage
d2
(dB)
50
MBB290
55
55
60
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 50 dBmV; T_amb = 25 °C;
f_(p+q) = 450 MHz.
Fig.10 Second order intermodulation distortion as
a function of collector current.
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 50 dBmV; T_amb = 25 °C
f_(p+q) = 810 MHz.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 13
7