BFG135_2015 Datasheet, PDF(3/12 Page) Quanzhou Jinmei Electronic Co.,Ltd.

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BFG135_2015 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 7GHz wideband transistor

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Philips Semiconductors

NPN 7GHz wideband transistor

Product speciï¬cation

BFG135

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering

point

up to Ts = 145 Â°C (note 1)

Note

1. Ts is the temperature at the soldering point of the collector tab.

THERMAL

RESISTANCE

30 K/W

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

ICBO

hFE

Cre

GUM

PARAMETER

collector cut-off current

DC current gain

collector capacitance

emitter capacitance

feedback capacitance

transition frequency

maximum unilateral power

gain

output voltage

second order intermodulation

distortion

CONDITIONS

IE = 0; VCB = 10 V

IC = 100 mA; VCE = 10 V

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 0; VCE = 10 V; f = 1 MHz

IC = 100 mA; VCE = 10 V; f = 1 GHz;

Tamb = 25 Â°C

IC = 100 mA; VCE = 10 V;

f = 500 MHz; Tamb = 25 Â°C

IC = 100 mA; VCE = 10 V;

f = 800 MHz; Tamb = 25 Â°C

note 1

note 2

IC = 90 mA; VCE = 10 V;

VO = 50 dBmV; Tamb = 25 Â°C;

f(p+q) = 450 MHz;

fp = 50 MHz; fq = 400 MHz

IC = 90 mA; VCE = 10 V;

VO = 50 dBmV; Tamb = 25 Â°C;

f(p+q) = 810 MHz;

fp = 250 MHz; fq = 560 MHz

MIN.

TYP.

130

1.2

MAX. UNIT

ÂµA

GHz

900 â

850 â

â58 â

â53 â

Notes

1. dim = â60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 â¦; Tamb = 25 Â°C;

Vp = Vo at dim = â60 dB; fp = 445.25 MHz;

Vq = Vo â6 dB; fq = 453.25 MHz;

Vr = Vo â6 dB; fr = 455.25 MHz;

measured at f(p+qâr) = 443.25 MHz.

2. dim = â60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 â¦; Tamb = 25 Â°C;

Vp = Vo at dim = â60 dB; fp = 795.25 MHz;

Vq = Vo â6 dB; fq = 803.25 MHz;

Vr = Vo â6 dB; fr = 805.25 MHz;

measured at f(p+qâr) = 793.25 MHz.

1995 Sep 13

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