BFS505_2015 Datasheet, PDF (8/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS505
handbook, full pagewidth
pot. unst.
region
135°
0.5
stability
circle
0.2
0.2
0.5
180° 0
0.2
90°
1.0
1
2
45°
0.8
0.6
0.4
5
Fmin = 1. 2 dB
0.2
1
2 ^ΓOPT 5
F = 1.5 dB
0° 0
F = 2 dB
5
F = 3 dB
I_C = 1.25 mA; V_CE = 6 V;
f = 900 MHz; Z_o = 50 Ω.
0.5
−135°
1
−90°
2
−45°
MRC073
1.0
Fig.12 Noise circle.
handbook, full pagewidth
135°
0.5
0.2
0.2
0.5
180° 0
90°
1
F = 4 dB
2
45°
F = 3 dB
F = 2.5 dB
Fmin = 1.9 dB
5
Γ_OPT
1
2
5
1.0
0.8
0.6
0.4
0.2
0° 0
0.2
5
I_C = 1.25 mA; V_CE = 6 V;
f = 2 GHz; Z_o = 50 Ω.
0.5
−135°
1
−90°
2
−45°
MRC074
1.0
Fig.13 Noise circle.
September 1995
8