BFS505_2015 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS505
FEATURES
• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: N0
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CBO
V_CES
I_C
P_tot
h_FE
f_T
G_UM
F
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
open emitter
−
R_BE = 0
−
−
up to T_s = 147 °C; note 1
−
I_C = 5 mA; V_CE = 6 V; T_j = 25 °C 60
I_C = 5 mA; V_CE = 6 V; f = 1 GHz; −
T_amb = 25 °C
I_c = 5 mA; V_CE = 6 V; f = 900 MHz; −
T_amb = 25 °C
I_c = 1.25 mA; V_CE = 6 V;
−
f = 900 MHz; T_amb = 25 °C
−
20
V
−
15
V
−
18
mA
−
150 mW
120 250
9
−
GHz
17
−
dB
1.2 1.7 dB
Note
1. T_s is the temperature at the soldering point of the collector tab.
September 1995
2