BFS505_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS505
In Figs 6 to 9, G_UM = maximum unilateral power gain;
MSG = maximum stable gain; G_max = maximum available
gain.
25
handbook, halfpage
gain
(dB)
20
G _UM
15
MSG
10
5
MRC016
20
handbook, halfpage
gain
(dB)
15
10
5
MRC017
MSG
G _max
G _UM
0
0
2
4
V_CE = 6 V; f = 900 MHz; T_amb = 25 °C.
6
8
IC (mA)
Fig.6 Gain as a function of collector current.
0
0
2
4
V_CE = 6 V; f = 2 GHz; T_amb = 25 °C.
6
8
IC (mA)
Fig.7 Gain as a function of collector current.
handbook, ⁵ha⁰lfpage
gain
(dB)
40
30
20
10
0
10^−2
G _UM
MRC015
MSG
10^−1
G _max
1
10
f (GHz)
I_C = 1.25 mA; V_CE = 6 V; T_amb = 25 °C.
Fig.8 Gain as a function of frequency.
September 1995
handbook, h⁵a⁰lfpage
gain
(dB)
40
30
20
10
0
10^−2
G _UM
MSG
10^−1
MRC014
G _max
1 _{f (GHz)} 10
I_C = 5 mA; V_CE = 6 V; T_amb = 25 °C.
Fig.9 Gain as a function of frequency.
6