BFG520XR_2015 Datasheet, PDF (8/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG520; BFG520/X; BFG520/XR
handbook, full pagewidth
stability
circle
90°
1
135°
0.5
pot. unst.
region
2
45°
0.2
0.2
180° 0
0.2
Fmin = 1. 1 dB
Γ_OPT
0.5
1
2
F = 1.5 dB
F = 2 dB
F = 3 dB
5
5
5
1.0
0.8
0.6
0.4
0.2
0° 0
I_C = 5 mA; V_CE = 6 V;
f = 900 MHz; Z_o = 50 Ω.
0.5
−135°
1
−90°
2
−45°
MRA684
1.0
Fig.15 Noise circle figure.
handbook, full pagewidth
I_C = 5 mA; V_CE = 6 V;
f = 2 GHz; Z_o = 50 Ω.
September 1995
90°
1
135°
0.5
0.2
Gmax = 13 dB
180°
Γ_MS 0.2
0
G = 12 dB
F = 3 dB
F = 2.5 dB
F = 2 dB
Γ_OPT
Fmin = 1. 9 dB
0.5
1
2
0.2 ^{G = 11 dB}
G = 10 dB
2
45°
5
5
5
1.0
0.8
0.6
0.4
0.2
0° 0
0.5
−135°
1
−90°
2
−45°
MRA685
1.0
Fig.16 Noise circle figure.
8