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| BFG520XR_2015 Datasheet, PDF (6/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFG520; BFG520/X; BFG520/XR
In Figs 7 to 10, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
25
handbook, halfpage
gain
(dB)
20
MSG
15
10
5
MRA674
Gmax
GUM
25
handbook, halfpage
gain
(dB)
20
15
MSG
10
5
MRA675
Gmax
GUM
0
0
10
20
30
IC (mA)
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
0
0
10
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
20
30
IC (mA)
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
GUM
40
MSG
30
MRA676
20
Gmax
10
0
10
102
103
104
f (MHz)
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
September 1995
50
handbook, halfpage
gain
(dB)
40
30
20
10
GUM
MSG
MRA677
Gmax
0
10
102
103
104
f (MHz)
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
Fig.10 Gain as a function of frequency.
6
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