BFG520XR_2015 Datasheet, PDF (5/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG520; BFG520/X; BFG520/XR
400
handbook, halfpage
Ptot
(mW)
300
MRA670-1
200
100
0
0
50
100
150
200
Ts (oC)
Fig.3 Power derating curve.
250
handbook, halfpage
hFE
200
MRA671
150
100
50
0
10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 6 V; T_j = 25 °C.
Fig.4 DC current gain as a function of collector
current.
0.6
handbook, halfpage
Cre
(pF)
0.4
0.2
MRA672
12
handbook, halfpage
fT
(GHz)
8
4
MRA673
VCE = 6 V
VCE = 3 V
0
0
4
8
12
VCB (V)
I_C = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
September 1995
0
10^−1
1
10
10²
IC (mA)
f = 1 GHz; T_amb = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
5