BFG425W_2015 Datasheet, PDF (8/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor

Philips Semiconductors
NPN 25 GHz wideband transistor
Product specification
BFG425W
handbook, full pagewidth
90°
1
135°
0.5
0.2
0.2
0.5
1
180° 0
1.0
2
45°
0.8
0.6
0.4
5
0.2
2
5 40 MHz
0° 0
0.2
3 GHz
5
0.5
−135°
I_C = 25 mA; V_CE = 2 V; Z_o = 50 Ω.
1
−90°
2
−45°
1.0
MGG692
Fig.12 Common emitter output reflection coefficient (S₂₂); typical values.
Noise data
V_CE = 2 V; typical values.
f
I_C
(MHz) (mA)
F_min
(dB)
900
1
0.7
2
0.8
4
1
10
1.4
15
1.6
20
1.9
25
2.1
30
2.3
2000 1
1.3
2
1.2
4
1.2
10
1.6
15
1.9
20
2.2
25
2.5
30
2.8
Γ_mag
0.67
0.48
0.28
0.02
0.11
0.19
0.25
0.29
0.56
0.43
0.22
0.06
0.13
0.17
0.22
0.27
Γ_angle
19.1
17.8
11.7
−63.9
−162.4
−165.5
−166.3
−166.5
57.5
57.2
60.8
137.4
−162.1
−155.5
−152.2
−150.8
r_n
(Ω)
0.40
0.27
0.24
0.19
0.18
0.18
0.19
0.19
0.36
0.25
0.18
0.19
0.20
0.20
0.21
0.25
handbook, h³alfpage
Fmin
(dB)
2
(1)
(2)
1
MGG688
0
0
10
(1) V_CE = 2 V; f = 2 GHz.
(2) V_CE = 2 V; f = 900 MHz.
20
30
IC (mA)
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11
8