BFG425W_2015 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor

Philips Semiconductors
NPN 25 GHz wideband transistor
Product specification
BFG425W
handboo¹k,²h⁰alfpage
hFE
80
40
MGG682
(1)
(2)
(3)
0
0
10
20
30
40
IC (mA)
(1) V_CE = 3 V.
(2) V_CE = 2 V.
(3) V_CE = 1 V.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook²,⁰h⁰alfpage
Cre
(fF)
160
120
80
40
0
0
1
2
3
MGG683
4
5
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
25
handbo_fo_Tk, halfpage
(GHz)
20
15
10
5
0
1
MGG684
10
IC (mA)
10²
V_CE = 2 V; f = 2 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Mar 11
30
handbook, halfpage
MSG
(dB)
20
MGG685
10
0
0
10
20
30
40
IC (mA)
V_CE = 2 V; f = 900 MHz.
Fig.6 Maximum stable gain as a function of
collector current; typical values.
5