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BFG425W_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor | |||
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Philips Semiconductors
NPN 25 GHz wideband transistor
Product speciï¬cation
BFG425W
handbook,3h0alfpage
gain
(dB)
20
MSG
MGG686
Gmax
10
0
0
10
20
30
40
IC (mA)
VCE = 2 V; f = 2 GHz.
Fig.7 Gain as a function of collector current;
typical values.
handbook,5h0alfpage
gain
(dB)
40
30
20
10
0
10
MSG
S21
MGG687
Gmax
102
103 f (MHz) 104
IC = 25 mA; VCE = 2 V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, full pagewidth
90°
1
135°
0.5
2
45°
0.2
0.2
180° 0
5
3 GHz
0.5 MG1G689 2
5
40 MHz
1.0
0.8
0.6
0.4
0.2
0° 0
0.2
5
0.5
â135°
IC = 25 mA; VCE = 2 V; Zo = 50 â¦.
1
â90°
2
â45°
1.0
MGG689
Fig.9 Common emitter input reflection coefficient (S11); typical values.
1998 Mar 11
6
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