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BFG425W_15 Datasheet, PDF (8/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor | |||
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Philips Semiconductors
NPN 25 GHz wideband transistor
Product speciï¬cation
BFG425W
handbook, full pagewidth
90°
1
135°
0.5
0.2
0.2
0.5
1
180° 0
1.0
2
45°
0.8
0.6
0.4
5
0.2
2
5 40 MHz
0° 0
0.2
3 GHz
5
0.5
â135°
IC = 25 mA; VCE = 2 V; Zo = 50 â¦.
1
â90°
2
â45°
1.0
MGG692
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
VCE = 2 V; typical values.
f
IC
(MHz) (mA)
Fmin
(dB)
900
1
0.7
2
0.8
4
1
10
1.4
15
1.6
20
1.9
25
2.1
30
2.3
2000 1
1.3
2
1.2
4
1.2
10
1.6
15
1.9
20
2.2
25
2.5
30
2.8
Îmag
0.67
0.48
0.28
0.02
0.11
0.19
0.25
0.29
0.56
0.43
0.22
0.06
0.13
0.17
0.22
0.27
Îangle
19.1
17.8
11.7
â63.9
â162.4
â165.5
â166.3
â166.5
57.5
57.2
60.8
137.4
â162.1
â155.5
â152.2
â150.8
rn
(â¦)
0.40
0.27
0.24
0.19
0.18
0.18
0.19
0.19
0.36
0.25
0.18
0.19
0.20
0.20
0.21
0.25
handbook, h3alfpage
Fmin
(dB)
2
(1)
(2)
1
MGG688
0
0
10
(1) VCE = 2 V; f = 2 GHz.
(2) VCE = 2 V; f = 900 MHz.
20
30
IC (mA)
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11
8
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