BFG425W_15 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor

Philips Semiconductors
NPN 25 GHz wideband transistor
Product specification
BFG425W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_(BR)CBO collector-base breakdown voltage I_C = 2.5 µA; I_E = 0
10
V_(BR)CEO collector-emitter breakdown voltage I_C = 1 mA; I_B = 0
4.5
V_(BR)EBO emitter-base breakdown voltage
I_E = 2.5 µA; I_C = 0
1
I_CBO
collector-base leakage current
I_E = 0; V_CB = 4.5 V
−
h_FE
DC current gain
I_C = 25 mA; V_CE = 2 V; see Fig.3 50
C_c
collector capacitance
I_E = i_e = 0; V_CB = 2 V; f = 1 MHz
−
C_e
emitter capacitance
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
C_re
feedback capacitance
I_C = 0; V_CB = 2 V; f = 1 MHz;
−
see Fig.4
−
−
V
−
−
V
−
−
V
−
15 nA
80 120
300 −
fF
575 −
fF
95 −
fF
f_T
G_max
S₂₁ ²
F
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
P_L1
output power at 1 dB gain
compression
ITO
third order intercept point
I_C = 25 mA; V_CE = 2 V; f = 2 GHz; −
T_amb = 25 °C; see Fig.5
I_C = 25 mA; V_CE = 2 V; f = 2 GHz; −
T_amb = 25 °C; see Figs 7 and 8
I_C = 25 mA; V_CE = 2 V; f = 2 GHz; −
T_amb = 25 °C; see Fig.8
I_C = 2 mA; V_CE = 2 V; f = 900 MHz; −
Γ_S = Γ_opt; see Fig.13
I_C = 2 mA; V_CE = 2 V; f = 2 GHz; −
Γ_S = Γ_opt; see Fig.13
I_C = 25 mA; V_CE = 2 V; f = 2 GHz; −
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
I_C = 25 mA; V_CE = 2 V; f = 2 GHz; −
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
25 −
20 −
17 −
0.8 −
1.2 −
12 −
22 −
GHz
dB
dB
dB
dB
dBm
dBm
Notes
1. G_max is the maximum power gain, if K > 1. If K < 1 then G_max = MSG; see Figs 6, 7 and 8.
2. Z_S is optimized for noise; Z_L is optimized for gain.
1998 Mar 11
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