BFG425W_15 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor

Philips Semiconductors
NPN 25 GHz wideband transistor
Product specification
BFG425W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 103 °C; note 1; see Fig.2
Note
1. T_s is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
MIN.
−
−
−
−
−
−65
−
MAX.
10
4.5
1
30
135
+150
150
UNIT
V
V
V
mA
mW
°C
°C
VALUE
350
UNIT
K/W
200
handbook, halfpage
Ptot
(mW)
150
MGG681
100
50
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
1998 Mar 11
3