BFG403W_2015 Datasheet, PDF (8/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 17 GHz wideband transistor

Philips Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
handbook, full pagewidth
90°
1
135°
0.5
0.2
0.2
0.5
1
180° 0
1.0
2
45°
0.8
0.6
0.4
5
0.2
2
5 ^{40 MHz}
0° 0
0.2
5
3 GHz
0.5
−135°
I_C = 3 mA; V_CE = 2 V; Z_o = 50 Ω.
1
−90°
2
−45°
1.0
MGG716
Fig.12 Common emitter output reflection coefficient (S₂₂); typical values.
Noise data
V_CE = 2 V; typical values.
f
I_C
(MHz) (mA)
F_min
(dB)
900
0.5
0.9
1
1.1
2
1.4
3
1.6
4
1.9
5
2.1
2000 0.5
1.8
1
1.6
2
1.8
3
2.1
4
2.4
5
2.8
Γ_mag
0.91
0.83
0.71
0.62
0.56
0.50
0.71
0.74
0.64
0.56
0.48
0.45
Γ_angle
4.7
5.1
5.1
5.0
4.9
4.2
27.5
26.1
26.3
26.1
26.7
25.8
r_n
(Ω)
1.41
1.12
0.97
0.88
0.84
0.82
1.47
1.11
0.93
0.91
0.9
0.85
handbook, h³alfpage
Fmin
(dB)
2
1
MGG712
(1)
(2)
0
0
2
4
6
IC (mA)
(1) V_CE = 2 V; f = 2 GHz.
(2) V_CE = 2 V; f = 900 MHz.
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11
8