BFG403W_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 17 GHz wideband transistor

Philips Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
handbook,³h⁰alfpage
MSG
(dB)
20
MGG710
10
0
0
2
4
6
IC (mA)
V_CE = 2 V; f = 2 GHz.
Fig.7 Maximum stable gain as a function of
collector current; typical values.
handbook,⁴h⁰alfpage
gain
(dB)
30
MSG
MGG711
20
S21
10
0
10
10²
10³ _{f (MHz)} 10⁴
I_C = 3 mA; V_CE = 2 V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, full pagewidth
90°
1
135°
0.5
0.2
0.2
0.5
1
180° 0
1.0
2
45°
0.8
0.6
0.4
5
0.2
2
5 40 MHz
0° 0
0.2
3 GHz
5
0.5
−135°
I_C = 3 mA; V_CE = 2 V; Z_o = 50 Ω.
1
−90°
2
−45°
1.0
MGG713
Fig.9 Common emitter input reflection coefficient (S₁₁); typical values.
1998 Mar 11
6