BFG403W_2015 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 17 GHz wideband transistor

Philips Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
FEATURES
• Low current
• Very high power gain
• Low noise figure
• High transition frequency
• Very low feedback capacitance.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
APPLICATIONS
• Pager front ends
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: P3.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_max
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
−
−
10 V
−
−
4.5 V
−
3
3.6 mA
T_s ≤ 140 °C
−
−
16 mW
I_C = 3 mA; V_CE = 2 V; T_j = 25 °C
50 80 120
I_C = 0; V_CB = 2 V; f = 1 MHz
−
20 −
fF
I_C = 3 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 °C −
17 −
GHz
I_C = 3 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 °C −
22 −
dB
I_C = 1 mA; V_CE = 2 V; f = 900 MHz; Γ_S = Γ_opt −
1
−
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
2