BFR540_2015 Datasheet, PDF (7/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
handbook, h⁵alfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
Gass
Fmin
MRA698
20
Gass
(dB)
15
f = 900 MHz
1000 MHz
2000 MHz ¹⁰
5
0
0
−5
1
10
10²
IC (mA)
V_CE = 8 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
5
handbo_Fo_mk, _ih_nalfpa_Ig_Ce _{= 10 mA}
(dB)
4
3
40 mA
Gass
MRA699
20
Gass
(dB)
15
10
2
5
40 mA
10 mA
Fmin
1
0
0
−5
10²
10³
10⁴
f (MHz)
V_CE = 8 V.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
handbook, full pagewidth
90°
1.0
1
135°
0.5
2
45°
0.8
pot. unst.
region
0.2
Fmin = 1.3 dB
Γ_OPT
0.6
0.4
5
0.2
0.2
0.5
1
2
5
180° 0
F = 1.5 dB
stability
circle
F = 2 dB
0° 0
0.2
5
F = 3 dB
Z_o = 50 Ω.
V_CE = 8 V; I_C = 10 mA; f = 900 MHz.
0.5
−135°
1
−90°
2
−45°
MRA700
1.0
Fig.12 Noise circle figure.
2000 May 30
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