BFR540_2015 Datasheet, PDF (6/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
In Figs 6 to 9, G_UM = maximum unilateral power gain;
MSG = maximum stable gain; G_max = maximum available
gain.
25
handbook, halfpage
gain
(dB)
20
MSG
15
10
MRA690
Gmax
GUM
5
0
0
20
V_CE = 8 V; f = 900 MHz.
40
60
IC (mA)
Fig.6 Gain as a function of collector current.
25
handbook, halfpage
gain
(dB)
20
MRA691
15
10
Gmax
GUM
5
0
0
20
V_CE = 8 V; f = 2 GHz.
40
60
IC (mA)
Fig.7 Gain as a function of collector current.
handbook,⁵h⁰alfpage
gain
(dB)
40
GUM
MSG
30
20
10
0
10
10²
MRA692
Gmax
10³
10⁴
f (MHz)
V_CE = 8 V; I_c = 10 mA.
Fig.8 Gain as a function of frequency.
2000 May 30
50
handbook, halfpage
gain
(dB)
40 ^GUM
MSG
30
MRA693
20
10
0
10
Gmax
10²
10³
10⁴
f (MHz)
V_CE = 8 V; I_c = 40 mA.
Fig.9 Gain as a function of frequency.
6