BFR540_2015 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
h_FE
DC current gain
C_e
emitter capacitance
C_c
collector capacitance
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral
power gain; note 1
|s₂₁|²
F
insertion power gain
noise figure
P_L1
output power at 1 dB gain
compression
ITO
third order intercept point
V_o
output voltage; note 3
CONDITIONS
I_E = 0; V_CB = 8 V
I_C = 40 mA; V_CE = 8 V
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
I_C = 0; V_CB = 8 V; f = 1 MHz
I_C = 40 mA; V_CE = 8 V; f = 1 GHz
I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
I_C = 40 mA; V_CE = 8 V; R_L = 50 Ω;
T_amb = 25 °C; f = 900 MHz
note 2
I_C = 40 mA; V_CE = 8 V;
Z_L = Z_S = 75 Ω; T_amb = 25 °C
Notes
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero and
G_UM = 10 log ₍---1-----_–------s---₁---₁---s-₂---²₎--₍¹---1-²---_–------s----₂--₂----₂----₎ dB.
2. I_C = 40 mA; V_CE = 8 V; R_L = 50 Ω;
T_amb = 25 °C; f = 900 MHz;
f_p = 900 MHz; f_q = 902 MHz;
measured at f_(2p−q) = 898 MHz and f_(2q−p) = 904 MHz.
3. d_im = −60 dB (DIN 45004B);
V_p = V_O; V_q = V_O −6 dB; f _p = 795.25 MHz;
V_R = V_O −6 dB; f_q = 803.25 MHz; f_r = 805.25 MHz;
measured at f_(p+q-r) = 793.25 MHz; preliminary data.
MIN. TYP. MAX. UNIT
−
−
50 nA
100 120 250
−
2
−
pF
−
0.9 −
pF
−
0.6 −
pF
−
9
−
GHz
−
14 −
dB
−
7
−
dB
12 13 −
dB
−
1.3 1.8 dB
−
1.9 2.4 dB
−
2.1 −
dB
−
21 −
dBm
−
34 −
dBm
−
550 −
mV
2000 May 30
4