BFR505_15 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR505
5
handbook, halfpage
Fmin
(dB)
4
3
2
2000 MHz
1000 MHz
900 MHz
1
500 MHz
MRA726
20
Gass
(dB)
f = 900 MHz ₁₅
Gass
1000 MHz
10
2000 MHz
5
Fmin
0
0
10^−1
−5
1
IC (mA)
10
V_CE = 6 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
5
handbook, halfpage
Fmin
(dB) ^{IC = 1.25 mA}
4
5 mA
Gass
3
MRA727
20
Gass
(dB)
15
10
2
5 mA
1
1.25 mA
Fmin
0
10²
10³
f (MHz)
5
0
−5
10⁴
V_CE = 6 V.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
handbook, full pagewidth
pot. unst.
region
135°
0.5
stability
circle
0.2
0.2
0.5
180° 0
0.2
90°
1
2
45°
5
Fmin = 1. 2 dB
Γ_OPT
1
F = 1.5 dB 5
F = 2 dB
F = 3 dB
5
1.0
0.8
0.6
0.4
0.2
0° 0
Z_o = 50 Ω.
V_CE = 6 V; I_C = 5 mA; f = 900 MHz.
0.5
−135°
1
−90°
2
−45°
MRA728
1.0
Fig.12 Noise circle figure.
September 1995
7