BFR505_15 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR505
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
PINNING
PIN
DESCRIPTION
Code: N30
1 base
2 emitter
3 collector
DESCRIPTION
The BFR505 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV).
The transistor is encapsulated in a
plastic SOT23 envelope.
fpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
S₂₁²
F
insertion power gain
noise figure
open emitter
R_BE = 0
up to T_s = 135 °C; note 1
I_C = 5 mA; V_CE = 6 V
I_C = i_c = 0; V_CB = 6 V; f = 1 MHz
I_C = 5 mA; V_CE = 6 V; f = 1 GHz
I_C = 5 mA; V_CE = 6 V;
T_amb = 25 °C; f = 900 MHz
I_C = 5 mA; V_CE = 6 V;
T_amb = 25 °C; f = 2 GHz
I_C = 5 mA; V_CE = 6 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 1.25 mA; V_CE = 6 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 6 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 1.25 mA; V_CE = 6 V;
T_amb = 25 °C; f = 2 GHz
Note
1. T_s is the temperature at the soldering point of the collector tab.
September 1995
2
MIN. TYP. MAX. UNIT
−
−
20 V
−
−
15 V
−
−
18 mA
−
−
150 mW
60 120 250
−
0.3 −
pF
−
9
−
GHz
−
17 −
dB
−
10 −
dB
13 14 −
dB
−
1.2 1.7 dB
−
1.6 2.1 dB
−
1.9 −
dB