BFR505_15 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR505
handboo²k,⁰h⁰alfpage
Ptot
(mW)
150
MRA718 - 1
100
50
0
0
50
100
150
200
Ts (^o C)
Fig.2 Power derating curve.
250
handbook, halfpage
hFE
200
MRA719
150
100
50
010_−3
10^−2
10^−1
1
V_CE = 6 V.
10
10²
IC (mA)
Fig.3 DC current gain as a function of collector
current.
handbook⁰, ^.h⁴alfpage
Cre
(pF)
0.3
MRA720
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
I_c = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
September 1995
12
fT
(GHz)
8
4
MRA721
VCE = 6V
VCE = 3V
10^−1
1
10
IC (mA) ¹⁰²
T_amb = 25 °C; f = 1 GHz.
Fig.5 Transition frequency as a function of
collector current.
5