BFR505T_15 Datasheet, PDF (7/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR505T
4
handbook, halfpage
F
(dB)
3
MRC018
2
f = 2 GHz
900 MHz
1
500 MHz
0
10^−1
1
IC (mA) ¹⁰
V_CE = 6 V; T_amb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
handbook, h⁴alfpage
F
(dB)
3
2
1
MRC012
IC = 5 mA
1.25 mA
0
10^−1
1
f (GHz) ¹⁰
V_CE = 6 V; T_amb = 25 °C.
Fig.11 Minimum noise figure as a function of
frequency.
handbook, full pagewidth
pot. unst.
region
135°
0.5
stability
circle
0.2
0.2
0.5
180° 0
0.2
90°
1.0
1
2
45°
0.8
0.6
0.4
5
Fmin = 1. 2 dB
0.2
1
2 ^ΓOPT 5
F = 1.5 dB
0° 0
F = 2 dB
5
F = 3 dB
I_C = 1.25 mA; V_CE = 6 V;
f = 900 MHz; Z_o = 50 Ω.
0.5
−135°
1
−90°
2
−45°
MRC073
1.0
Fig.12 Noise circle.
2000 May 17
7