BFR505T_15 Datasheet, PDF(4/16 Page) Quanzhou Jinmei Electronic Co.,Ltd.

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BFR505T_15 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

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Philips Semiconductors

NPN 9 GHz wideband transistor

Product speciï¬cation

BFR505T

CHARACTERISTICS

Tj = 25 Â°C; unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

ICBO

hFE

Cre

GUM

ï£´S21ï£´2

PL1

ITO

collector cut-off current

IE = 0; VCB = 6 V

DC current gain

IC = 5 mA; VCE = 6 V

collector capacitance

IE = ie = 0; VCB = 6 V; f = 1 MHz

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz â

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz

transition frequency

IC = 5 mA; VCE = 6 V; f = 1 GHz;

Tamb = 25 Â°C

maximum unilateral power gain; IC = 5 mA; VCE = 6 V; Tamb = 25 Â°C;

note 1

f = 900 MHz

f = 2 GHz

insertion power gain

IC = 5 mA; VCE = 6 V; f = 900 MHz; 13

Tamb = 25 Â°C

noise ï¬gure

Îs = Îopt; IC = 1.25 mA; VCE = 6 V; â

f = 900 MHz; Tamb = 25 Â°C

Îs = Îopt; IC = 5 mA; VCE = 6 V;

f = 900 MHz; Tamb = 25 Â°C

Îs = Îopt; IC = 1.25 mA; VCE = 6 V; â

f = 2 GHz; Tamb = 25 Â°C

output power at 1 dB gain

compression

IC = 5 mA; VCE = 6 V; RL = 50 â¦;

f = 900 MHz; Tamb = 25 Â°C

third-order intercept point

note 2

120 250

0.4 â

0.3 â

GHz

1.2 1.7 dB

1.6 2.1 dB

1.9 â

dBm

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM = 10 log -(--1-----â------S----1---1---S-2---)2--(-1--1--2--â------S-----2--2----2----) dB

2. IC = 5 mA; VCE = 6 V; RL = 50 â¦; f = 900 MHz; Tamb = 25 Â°C; fp = 900 MHz; fq = 902 MHz; measured at

f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz.

2000 May 17

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