BFR505T_15 Datasheet, PDF (2/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR505T
FEATURES
• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
fpage
3
1
Top view
2
MBK090
Marking code: N0.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CES
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
MIN.
open emitter
−
R_BE = 0
−
−
T_s ≤ 75 °C; note 1
−
I_C = 5 mA; V_CE = 6 V; T_j = 25 °C 60
I_C = 5 mA; V_CE = 6 V; f = 1 GHz; −
T_amb = 25 °C
I_C = 5 mA; V_CE = 6 V; f = 900 MHz; −
T_amb = 25 °C
I_C = 1.25 mA; V_CE = 6 V;
−
f = 900 MHz; T_amb = 25 °C
TYP.
−
−
−
−
120
9
17
1.2
MAX. UNIT
20
V
15
V
18
mA
150 mW
250
−
GHz
−
dB
1.7 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CE
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
T_s ≤ 75 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
20
V
15
V
2.5 V
18
mA
150 mW
+150 °C
150 °C
2000 May 17
2