BFG540W_15 Datasheet, PDF (6/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
30
handbook, halfpage
gain
(dB)
20
MSG
10
MLC045
G _max
GUM
0
0
10
20
30
40
50
IC (mA)
f = 900 MHz; V_CE = 8 V.
Fig.7 Gain as a function of collector current;
typical values.
30
handbook, halfpage
gain
(dB)
20
MLC046
10
G _max
GUM
0
0
10
20
30
40
50
IC (mA)
f = 2 GHz; V_CE = 8 V.
Fig.8 Gain as a function of collector current;
typical values.
50
hand_gbo_ao_ink, halfpage
(dB)
40
G _UM
MSG
30
20
10
0
10
10²
MLC047
G _max
10³
10⁴
f (MHz)
I_C = 10 mA; V_CE = 8 V.
Fig.9 Gain as a function of frequency; typical
values.
2000 May 23
50
hand_gbo_ao_ink, halfpage
(dB)
40
G _UM
MSG
30
20
10
0
10
10²
MLC048
G _max
10³
10⁴
f (MHz)
I_C = 40 mA; V_CE = 8 V.
Fig.10 Gain as a function of frequency; typical
values.
6