BFG540W_15 Datasheet, PDF (2/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers,
satellite television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
MARKING
TYPE NUMBER
BFG540W
BFG540W/X
BFG540W/XR
CODE
N9
N7
N8
PINNING
PIN
DESCRIPTION
BFG540W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG540W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG540W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
fpage
4
3
1
Top view
2
MBK523
Fig.1 SOT343N.
alfpage
3
4
2
Top view
1
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
G_UM
|s₂₁|²
F
collector-base voltage open emitter
collector-emitter voltage R_BE = 0
collector current (DC)
total power dissipation T_s ≤ 85 °C
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
I_C = 40 mA; V_CE = 8 V
I_C = 0; V_CB = 8 V; f = 1 MHz
I_C = 40 mA; V_CE = 8 V; f = 1 GHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 2 GHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V; f = 2 GHz
MIN. TYP. MAX. UNIT
−
−
20 V
−
−
15 V
−
−
120 mA
−
−
500 mW
100 120 250
−
0.5 −
pF
−
9
−
−
16 −
GHz
dB
10 −
dB
14 15 −
dB
−
2.1 −
dB
2000 May 23
2