BFG540W_15 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_(BR)CBO
V_(BR)CES
V_(BR)EBO
I_CBO
h_FE
f_T
C_c
C_e
C_re
G_UM
|s₂₁|²
F
P_L1
ITO
V_o
d₂
collector-base breakdown
voltage
open emitter; I_C = 10 µA ; I_E = 0
20
collector-emitter breakdown
R_BE = 0; I_C = 40 µA
15
voltage
emitter-base breakdown
voltage
open collector; I_E = 100 µA; I_C = 0 2.5
collector cut-off current
open emitter; V_CB = 8 V; I_E = 0
−
DC current gain
I_C = 40 mA; V_CE = 8 V
100
transition frequency
I_C = 40 mA; V_CE = 8 V; f = 1 GHz; −
T_amb = 25 °C
collector capacitance
emitter capacitance
feedback capacitance
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
I_C = 0; V_CB = 8 V; f = 1 MHz
−
maximum unilateral power gain; I_C = 40 mA; V_CE = 8 V; f = 900 MHz; −
note 1
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 2 GHz; −
T_amb = 25 °C
insertion power gain
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; 14
T_amb = 25 °C
noise figure
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
−
f = 900 MHz
Γ_s = Γ_opt; I_C = 40 mA; V_CE = 8 V;
−
f = 900 MHz
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
−
f = 2 GHz
output power at 1 dB gain
compression
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; −
R_L = 50 Ω; T_amb = 25 °C
third order intercept point
note 2
−
output voltage
note 3
−
second order intermodulation note 4
−
distortion
TYP.
−
−
−
−
120
9
0.9
2
0.5
16
10
15
1.3
1.9
2.1
21
34
500
−50
MAX.
−
−
−
50
250
−
−
−
−
−
−
−
1.8
2.4
−
−
−
−
−
UNIT
V
V
V
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
Notes
1.
2.
G_UM is the maximum unilateral power gain, assuming s₁₂ is zero.
I_C = 40 mA; V_CE = 8 V; R_L = 50 Ω; T_amb = 25 °C;
G_UM
=
10
log -₍--1-----_–------s---₁---₁---s-₂---²₎--¹₍---1-²----_–------s---₂--₂-----₂---₎
dB.
a) f_p = 900 MHz; f_q = 902 MHz; measured at f_{(2p − q)} = 898 MHz and f_{(2q − p)} = 904 MHz.
3. d_im = −60 dB (DIN45004B); V_p = V_o; V_q = V_o −6 dB; V_r = V_o −6 dB; R_L = 75 Ω; V_CE = 8 V; I_C = 40 mA;
a) f_p = 795.25 MHz; f_q = 803.25 MHz; f_r = 805.25 MHz; measured at f_{(p + q − r)} = 793.25 MHz.
4. I_C = 40 mA; V_CE = 8 V; V_o = 275 mV; R_L = 75 Ω; T_amb = 25 °C;
a) f_p = 250 MHz; f_q = 560 MHz; measured at f_{(p + q)} = 810 MHz.
2000 May 23
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