BFG424F_15 Datasheet, PDF (6/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor

Philips Semiconductors
30
f_T
(GHz)
20
10
001aad821
BFG424F
NPN 25 GHz wideband transistor
30
G
(dB)
20
10
MSG
001aad822
s₂₁ ²
0
1
10
10²
I_C (mA)
V_CE = 2 V; f = 2 GHz; T_amb = 25 °C
Fig 5. Transition frequency as a function of collector
current; typical values
0
1
10
10²
I_C (mA)
V_CE = 2 V; f = 0.9 GHz; T_amb = 25 °C
Fig 6. Gain as a function of collector current; typical
values
30
G
(dB)
20
10
MSG
001aad823
G_p(max)
s₂₁ ²
45
G
(dB)
35
MSG
25
s₂₁ ²
15
5
001aad824
G_p(max)
0
1
10
10²
I_C (mA)
V_CE = 2 V; f = 2 GHz; T_amb = 25 °C
Fig 7. Gain as a function of collector current; typical
values
−5
10^−1
1
10
10²
f (GHz)
V_CE = 2 V; I_C = 25 mA; T_amb = 25 °C
Fig 8. Gain as a function of frequency; typical values
BFG424F_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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